NXP BFU550XAR Wideband RF Transistor NPN wideband silicon RF transistor

Width: 1.4 mm

Height: 1.1 mm

Length: 3 mm

Technology: Si

Unit Weight: 8.870 mg

Output Power: 13.5 dBm

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: Bipolar Wideband

Operating Frequency: 11 GHz

Transistor Polarity: NPN

Pd - Power Dissipation: 450 mW

DC Current Gain hFE Max: 200

Gain Bandwidth Product fT: 11 GHz

Emitter- Base Voltage VEBO: 2 V

Operating Temperature Range: - 40 C to + 150 C

Collector- Base Voltage VCBO: 24 V

Continuous Collector Current: 50 mA

Maximum DC Collector Current: 80 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

DC Collector/Base Gain hfe Min: 60

Collector- Emitter Voltage VCEO Max: 12 V