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Technology: SiGe
Unit Weight: 6 mg
Configuration: Single
Qualification: AEC-Q100
Mounting Style: SMD/SMT
Transistor Type: Bipolar
Operating Frequency: 65 GHz
Transistor Polarity: NPN
Pd - Power Dissipation: 185 mW
Emitter- Base Voltage VEBO: 1.2 V
Continuous Collector Current: 80 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 110
Collector- Emitter Voltage VCEO Max: 2.3 V
