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Marktech Optoelectronics MTD8600T4-T Phototransistors Photo Diode 880nm

Width: 4.65 mm

Height: 4.5 mm

Length: 4.65 mm

Fall Time: 10 us

Rise Time: 10 us

Wavelength: 880 nm

Dark Current: 100 nA

Mounting Style: Through Hole

Peak Wavelength: 880 nm

Pd - Power Dissipation: 250 mW

Half Intensity Angle Degrees: 110 deg

Maximum Operating Temperature: + 100 C

Minimum Operating Temperature: - 30 C

Maximum On-State Collector Current: 50 mA

Collector- Emitter Voltage VCEO Max: 30 V

Collector-Emitter Breakdown Voltage: 30 V

Collector-Emitter Saturation Voltage: 200 mV

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