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Technology: SiC
Configuration: Half Bridge
Vf - Forward Voltage: 2 V
Vr - Reverse Voltage: 800 V
Pd - Power Dissipation: 2 kW
Vgs - Gate-Source Voltage: - 8 V, + 19 V
Id - Continuous Drain Current: 630 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Rds On - Drain-Source Resistance: 3.47 mOhms
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs th - Gate-Source Threshold Voltage: 2.5 V
