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Technology: SiC
Unit Weight: 220.541 g
Configuration: Dual
Mounting Style: Screw Mount
Transistor Polarity: N-Channel
Vf - Forward Voltage: 6 V
Vr - Reverse Voltage: 1.2 kV
Pd - Power Dissipation: 50 mW
Vgs - Gate-Source Voltage: - 4 V, + 15 V
Id - Continuous Drain Current: 395 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 40 C
Rds On - Drain-Source Resistance: 5.3 mOhms
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs th - Gate-Source Threshold Voltage: 1.8 V
