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Fall Time: 18 ns
Rise Time: 20 ns
Technology: SiC
Unit Weight: 6 g
Channel Mode: Enhancement
Configuration: Single
Mounting Style: Through Hole
Qg - Gate Charge: 188 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 520 W
Vgs - Gate-Source Voltage: - 5 V, + 20 V
Typical Turn-On Delay Time: 65 ns
Typical Turn-Off Delay Time: 48 ns
Id - Continuous Drain Current: 72 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Forward Transconductance - Min: 21.7 S
Rds On - Drain-Source Resistance: 45 mOhms
Vds - Drain-Source Breakdown Voltage: 1.7 kV
Vgs th - Gate-Source Threshold Voltage: 2 V
