Vishay SIR512DP-T1-RE3 MOSFETs SOT669 100V 100A N-CH MOSFET
ManufacturerVishay(View more products from this manufacturer)
ModelSIR512DP-T1-RE3
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Fall Time: 11 ns
Rise Time: 11 ns
Technology: Si
Channel Mode: Enhancement
Mounting Style: SMD/SMT
Qg - Gate Charge: 30.5 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vgs - Gate-Source Voltage: - 10 V, + 10 V
Typical Turn-On Delay Time: 25 ns
Typical Turn-Off Delay Time: 34 ns
Id - Continuous Drain Current: 100 A
Forward Transconductance - Min: 75 S
Rds On - Drain-Source Resistance: 4.5 mOhms
Vds - Drain-Source Breakdown Voltage: 100 V
Vgs th - Gate-Source Threshold Voltage: 4 V
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