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Vgs(th): 2.1 V
Vgs (Max): +16|-12V
Gate Charge (Qg): 200nC
Power consumption: 6.25|125W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 25V
Continuous drain current: 87.7A/100A
Input Capacitance (Ciss): 1085pF
Operating temperature range: -55 to 150C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 5.8mOhm
Drive Voltage (Max Rds On, Min Rds On): 4.5|10V
