Vishay Siliconix SQW61N65EF-GE3 Automotive E Series Power MOSFET With Fast Body Diode TO247 650V 62A N-CH MOSFET

Fall Time: 102 ns

Rise Time: 107 ns

Technology: Si

Unit Weight: 6 g

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q101

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 229 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 625 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 65 ns

Typical Turn-Off Delay Time: 252 ns

Id - Continuous Drain Current: 62 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 52 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 4 V