Vishay Siliconix SQD50P08-28-T4_GE3 MOSFETs -80V Vds 20V Vgs TO-252

Fall Time: 16 ns

Rise Time: 11 ns

Technology: Si

Unit Weight: 330 mg

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 145 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 136 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 15 ns

Typical Turn-Off Delay Time: 65 ns

Id - Continuous Drain Current: 48 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 32 S

Rds On - Drain-Source Resistance: 28 mOhms

Vds - Drain-Source Breakdown Voltage: 80 V

Vgs th - Gate-Source Threshold Voltage: 3.5 V