Vishay Siliconix SIUD412ED-T1-GE3 MOSFETs 12V Vds 5V Vgs PowerPAK 0806

Width: 0.6 mm

Height: 0.4 mm

Length: 0.8 mm

Technology: Si

Unit Weight: 299.212 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 710 pC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.25 W

Vgs - Gate-Source Voltage: - 5 V, + 5 V

Id - Continuous Drain Current: 500 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 340 mOhms

Vds - Drain-Source Breakdown Voltage: 12 V

Vgs th - Gate-Source Threshold Voltage: 350 mV