Vishay Siliconix SIHA6N80E-GE3 MOSFETs 800V Vds 30V Vgs TO-220 FULLPAK

Fall Time: 18 ns

Rise Time: 9 ns

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 44 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 31 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 13 ns

Typical Turn-Off Delay Time: 27 ns

Id - Continuous Drain Current: 5.4 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 2.5 S

Rds On - Drain-Source Resistance: 820 mOhms

Vds - Drain-Source Breakdown Voltage: 800 V

Vgs th - Gate-Source Threshold Voltage: 4 V