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Width: 3.3 mm
Height: 1.04 mm
Length: 3.3 mm
Fall Time: 14 ns
Rise Time: 12 ns
Technology: Si
Unit Weight: 1 g
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N Channel
Qg - Gate Charge: 13 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 3.5 W
Vgs - Gate-Source Voltage: - 25 V, + 25 V
Typical Turn-On Delay Time: 8 ns
Typical Turn-Off Delay Time: 32 ns
Id - Continuous Drain Current: 6.5 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 50 C
Forward Transconductance - Min: 16 S
Rds On - Drain-Source Resistance: 19.5 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 1.8 V
