Vishay General Semiconductor VS-GT150TS065S IGBT Modules Modules IGBT - IAP IGBT
ModelVS-GT150TS065S
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Technology: Si
Configuration: Half Bridge
Mounting Style: Screw Mount
Pd - Power Dissipation: 789 W
Gate-Emitter Leakage Current: 360 nA
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 40 C
Collector-Emitter Saturation Voltage: 650 V
Continuous Collector Current at 25 C: 372 A
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