Vishay General Semiconductor VS-GT100YG120UT IGBT Modules
ModelVS-GT100YG120UT
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Technology: Si
Configuration: Quad
Mounting Style: Press Fit
Pd - Power Dissipation: 595 W
Gate-Emitter Leakage Current: 750 nA
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Continuous Collector Current at 25 C: 170 A
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