Vishay General Semiconductor VS-GP400TD60S IGBT Transistors Ic 400A Vce(On)1.30V Half Brdge Trench P

Technology: Si

Unit Weight: 333.672 g

Configuration: Dual

Mounting Style: Screw Mount

Pd - Power Dissipation: 1.563 kW

Gate-Emitter Leakage Current: +/- 750 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 600 V

Continuous Collector Current Ic Max: 758 A

Collector-Emitter Saturation Voltage: 1.3 V

Continuous Collector Current at 25 C: 758 A