Vishay General Semiconductor SQM200N04-1m1L_GE3 MOSFETs 40V 200A, 375W AEC-Q101 Qualified

Width: 9.65 mm

Height: 4.82 mm

Length: 10.41 mm

Fall Time: 126 ns

Rise Time: 12 ns

Technology: Si

Unit Weight: 1.600 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 413 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 375 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 13 ns

Typical Turn-Off Delay Time: 443 ns

Id - Continuous Drain Current: 200 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 219 S

Rds On - Drain-Source Resistance: 800 uOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 1.5 V