Vishay General Semiconductor SQA407CEJW-T1_GE3 MOSFETs Automotive P-Channel 20V (D-S) 175C MOSFET 1GmO 10V mO 7.5V 25mO 4.5V

Fall Time: 10 ns

Rise Time: 22 ns

Technology: Si

Mounting Style: SMD/SMT

Qg - Gate Charge: 15.7 nC

Transistor Polarity: P-Channel

Pd - Power Dissipation: 13.6 W

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 16 ns

Typical Turn-Off Delay Time: 29 ns

Id - Continuous Drain Current: 9 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 20 S

Rds On - Drain-Source Resistance: 1 mOhms, 25 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1.3 V