Vishay General Semiconductor SQ1563AEH-T1_GE3 MOSFETs N Ch 20Vds 8Vgs AEC-Q101 Qualified

Fall Time: 17 ns, 20 ns

Rise Time: 21 ns, 22 ns

Technology: Si

Unit Weight: 7.500 mg

Channel Mode: Enhancement

Configuration: Dual

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel, 1 N-Channel

Qg - Gate Charge: 930 pC, 1 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.5 W

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 3 ns, 2 ns

Typical Turn-Off Delay Time: 20 ns, 28 ns

Id - Continuous Drain Current: 850 mA

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 2.6 S, 1.5 S

Rds On - Drain-Source Resistance: 150 mOhms, 500 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 450 mV, 1.5 V