Vishay General Semiconductor SI8810EDB-T2-E1 MOSFETs 20V Vds 8V Vgs MICRO FOOT 0.8 x 0.8

Width: 1.6 mm

Height: 0.65 mm

Length: 1.6 mm

Technology: Si

Unit Weight: 45.104 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 8 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 900 mW

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Id - Continuous Drain Current: 2.9 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 72 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 400 mV