Vishay General Semiconductor SI6913DQ-T1-GE3 MOSFETs -12V Vds 8V Vgs TSSOP-8

Fall Time: 80 ns

Rise Time: 80 ns

Technology: Si

Unit Weight: 158 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 P-Channel

Qg - Gate Charge: 28 nC

Number of Channels: 2 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 1.14 W

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 45 ns

Typical Turn-Off Delay Time: 130 ns

Id - Continuous Drain Current: 5.8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 25 S

Rds On - Drain-Source Resistance: 21 mOhms

Vds - Drain-Source Breakdown Voltage: 12 V

Vgs th - Gate-Source Threshold Voltage: 400 mV