Vishay General Semiconductor SI1034X-T1-GE3 MOSFETs Dual N-Ch MOSFET 20V 5.0 ohms @ 4.5V

Width: 1.2 mm

Height: 0.6 mm

Length: 1.66 mm

Technology: Si

Unit Weight: 32 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Qg - Gate Charge: 750 pC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 280 mW

Vgs - Gate-Source Voltage: - 5 V, + 5 V

Id - Continuous Drain Current: 190 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 5 Ohms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 400 mV