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Fall Time: 10.6 ns
Rise Time: 2.4 ns
Technology: GaN
Channel Mode: Enhancement
Mounting Style: SMD/SMT
Qg - Gate Charge: 5 nC
Moisture Sensitive: Yes
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 13.2 W
Vgs - Gate-Source Voltage: - 10 V, + 10 V
Typical Turn-On Delay Time: 20.2 ns
Typical Turn-Off Delay Time: 31.2 ns
Id - Continuous Drain Current: 3.6 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 560 mOhms
Vds - Drain-Source Breakdown Voltage: 650 V
Vgs th - Gate-Source Threshold Voltage: 2.8 V
