Toshiba XPN9R614MC,L1XHQ MOSFETs 100W 1MHz Automotive; AEC-Q101

Fall Time: 200 ns

Rise Time: 26 ns

Technology: Si

Unit Weight: 20 mg

Channel Mode: Enhancement

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 64 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 100 W

Vgs - Gate-Source Voltage: - 20 V, + 10 V

Typical Turn-On Delay Time: 36 ns

Typical Turn-Off Delay Time: 600 ns

Id - Continuous Drain Current: 40 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 9.6 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 2.1 V