Toshiba TW015N120C,S1F SiC MOSFETS G3 1200V SiC-MOSFET TO-247 15mohm

Fall Time: 75 ns

Rise Time: 80 ns

Technology: SiC

Channel Mode: Enhancement

Mounting Style: Through Hole

Qg - Gate Charge: 158 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 431 W

Vgs - Gate-Source Voltage: - 10 V, + 25 V

Typical Turn-On Delay Time: 121 ns

Typical Turn-Off Delay Time: 139 ns

Id - Continuous Drain Current: 100 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 182 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 5 V