Toshiba TTA1452B,S4X BJTs - Bipolar Transistors Pb-F POWER MOSFET TRANSISTOR TO-220SIS 00 PD=30W F=1MHZ

Unit Weight: 1.700 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 30 W

DC Current Gain hFE Max: 240

Gain Bandwidth Product fT: 50 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 80 V

Continuous Collector Current: - 12 A

Maximum DC Collector Current: 15 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 120

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 190 mV