Toshiba TTA003,L1NQ(O BJTs - Bipolar Transistors PNP -80V 10W 100MHz 200 hFE
ManufacturerToshiba(View more products from this manufacturer)
ModelTTA003,L1NQ(O
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Technology: Si
Unit Weight: 360 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 10 W
Gain Bandwidth Product fT: 100 MHz
Emitter- Base Voltage VEBO: 7 V
Collector- Base Voltage VCBO: 80 V
Maximum DC Collector Current: 3 A
Maximum Operating Temperature: + 150 C
Collector- Emitter Voltage VCEO Max: 80 V
Collector-Emitter Saturation Voltage: 500 mV
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