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Technology: Si
Unit Weight: 9.750 g
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: PNP
Pd - Power Dissipation: 180 W
DC Current Gain hFE Max: 160
Gain Bandwidth Product fT: 30 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 160 V
Continuous Collector Current: - 18 A
Maximum DC Collector Current: 18 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 80
Collector- Emitter Voltage VCEO Max: 160 V
Collector-Emitter Saturation Voltage: 2 V
