Toshiba TRS12N65FB,S1Q Schottky Silicon Carbide Diodes SCHOTTKY BARRIER DIODE TO-247 V=650 IF=12A
ManufacturerToshiba(View more products from this manufacturer)
ModelTRS12N65FB,S1Q
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Technology: SiC
Configuration: Dual Anode Common Cathode
Mounting Style: Through Hole
If - Forward Current: 12 A
Ir - Reverse Current: 300 nA
Vf - Forward Voltage: 1.6 V
Pd - Power Dissipation: 130 W
Ifsm - Forward Surge Current: 104 A
Maximum Operating Temperature: + 175 C
Vrrm - Repetitive Reverse Voltage: 650 V
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