Toshiba TRS12A65F,S1Q Schottky Silicon Carbide Diodes RECT 650V 12A TO-220F-2L

Technology: SiC

Unit Weight: 1.830 g

Configuration: Single

Mounting Style: Through Hole

If - Forward Current: 12 A

Ir - Reverse Current: 600 nA

Vf - Forward Voltage: 1.45 V

Vr - Reverse Voltage: 650 V

Pd - Power Dissipation: 41 W

Ifsm - Forward Surge Current: 92 A

Maximum Operating Temperature: + 175 C

Vrrm - Repetitive Reverse Voltage: 650 V