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Toshiba TRS10E65H,S1Q Schottky Silicon Carbide Diodes G3 SiC-SBD 650V 10A TO-220-2L | EMIN.CO.TH

Diodes & Rectifiers
Toshiba TRS10E65H,S1Q Schottky Silicon Carbide Diodes G3 SiC-SBD 650V 10A TO-220-2L

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Toshiba TRS10E65H,S1Q Schottky Silicon Carbide Diodes G3 SiC-SBD 650V 10A TO-220-2L

ManufacturerToshiba(View more products from this manufacturer)

ModelTRS10E65H,S1Q

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Technology: SiC

Mounting Style: Through Hole

If - Forward Current: 10 A

Ir - Reverse Current: 2 uA

Vf - Forward Voltage: 1.2 V

Pd - Power Dissipation: 88 W

Ifsm - Forward Surge Current: 510 A

Vrrm - Repetitive Reverse Voltage: 650 V

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