Toshiba TPN6R303NC,LQ MOSFETs N-Ch 30V 1370pF 24nC 6.3mOhm 43A 19W

Width: 3.1 mm

Height: 0.85 mm

Length: 3.1 mm

Fall Time: 14 ns

Rise Time: 6 ns

Technology: Si

Unit Weight: 20 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 24 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 19 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 14 ns

Typical Turn-Off Delay Time: 55 ns

Id - Continuous Drain Current: 43 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 5.2 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 2.3 V