Toshiba TPH3R10AQM,LQ MOSFETs 100V U-MOS X-H SOP-Advance(N) 3.1mohm

Fall Time: 30 ns

Rise Time: 26 ns

Technology: Si

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 83 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 210 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 45 ns

Typical Turn-Off Delay Time: 104 ns

Id - Continuous Drain Current: 120 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 3.1 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V