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Toshiba TPC6503(TE85L,F,M) BJTs - Bipolar Transistors NPN hFE 400 to 1000 VCE 0.12V tF 45ns

ModelTPC6503(TE85L,F,M)
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Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 40 V

Maximum DC Collector Current: 1.5 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 400

Collector- Emitter Voltage VCEO Max: 20 V

Collector-Emitter Saturation Voltage: 120 mV

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