Toshiba TKR74F04PB,LXGQ MOSFETs PD=375W F=1MHZ AEC-Q101

Fall Time: 96 ns

Rise Time: 19 ns

Technology: Si

Channel Mode: Enhancement

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 227 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 375 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 52 ns

Typical Turn-Off Delay Time: 260 ns

Id - Continuous Drain Current: 250 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 740 uOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 3 V