Toshiba TK70J20D,S1Q MOSFETs N-Ch 200V 70A 410W MOSVII 160nC .0029

Fall Time: 745 ns

Rise Time: 230 ns

Technology: Si

Unit Weight: 4.600 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 160 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 410 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 155 ns

Typical Turn-Off Delay Time: 105 ns

Id - Continuous Drain Current: 70 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 27 mOhms

Vds - Drain-Source Breakdown Voltage: 200 V

Vgs th - Gate-Source Threshold Voltage: 3.5 V