Toshiba TK62N60W5,S1VF MOSFETs DTMOSIV 600V 45mOhm 61.8A 400W 6500pF

Fall Time: 13 ns

Rise Time: 190 ns

Technology: Si

Unit Weight: 6 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 205 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 400 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 270 ns

Typical Turn-Off Delay Time: 250 ns

Id - Continuous Drain Current: 61.8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 36 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 3 V