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Toshiba TK40P04M1(T6RSS-Q) Trans MOSFET N-CH Si 40V 40A 3-Pin(2+Tab) Case DP T/R

ModelTK40P04M1(T6RSS-Q)
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Type: Power MOSFET

Vgs(th): 2.3 V

Vgs (Max): 20V

Gate Charge (Qg): 29nC

Power consumption: 47W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 40V

Continuous drain current: 40A

Input Capacitance (Ciss): 1920pF

Operating temperature range: 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 11mOhm

Drive Voltage (Max Rds On, Min Rds On): 4.5|10V

Datasheet


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