Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Fall Time: 49 ns
Rise Time: 15 ns
Technology: Si
Channel Mode: Enhancement
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Qg - Gate Charge: 214 nC
Moisture Sensitive: Yes
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 375 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 44 ns
Typical Turn-Off Delay Time: 213 ns
Id - Continuous Drain Current: 200 A
Maximum Operating Temperature: + 175 C
Rds On - Drain-Source Resistance: 900 uOhms
Vds - Drain-Source Breakdown Voltage: 40 V
Vgs th - Gate-Source Threshold Voltage: 3 V
