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Toshiba TK13A60D(STA4,Q,M) Trans MOSFET N-CH Si 600V 13A 3-Pin(3+Tab) TO-220SIS

ModelTK13A60D(STA4,Q,M)
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Type: Power MOSFET

Vgs(th): 4 V

Vgs (Max): 30V

Gate Charge (Qg): 40nC

Power consumption: 50W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 600V

Continuous drain current: 13A

Input Capacitance (Ciss): 2300pF

Operating temperature range: 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 430mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V

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