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Toshiba TK12J60U(F) Trans MOSFET N-CH Si 600V 12A 3-Pin(3+Tab) TO-3PN

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Type: Power MOSFET

Vgs(th): 5 V

Vgs (Max): 30V

Gate Charge (Qg): 14nC

Power consumption: 144W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 600V

Continuous drain current: 12A

Input Capacitance (Ciss): 720pF

Operating temperature range: 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 400mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V

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