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Toshiba TK11A50D(STA4,Q,M) MOSFETs N-Ch 500V FET Vgss 30V 45W .45 ohm

ModelTK11A50D(STA4,Q,M)
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Width: 4.5 mm

Height: 15 mm

Length: 10 mm

Technology: Si

Unit Weight: 2 g

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 45 W

Id - Continuous Drain Current: 11 A

Rds On - Drain-Source Resistance: 600 mOhms

Vds - Drain-Source Breakdown Voltage: 500 V

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