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Toshiba TK10A60WS4VX Power MOSFET, N Channel, 600 V, 9.7 A, 380 Milliohms, TO-220SIS, 3 Pins, Through Hole

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No. of Pins: 3

Channel Type: N Channel

Product Range: DTMOSIV Series

Power Dissipation: 30 W

Transistor Mounting: Through Hole

RDS(ON) Test Voltage: 10 V

Transistor Case Style: TO-220SIS

Drain Source Voltage Vds: 600 V

Operating Temperature Max: 150 °C

Continuous Drain Current Id: 9.7 A

Drain Source On State Resistance: 380 mOhm

Gate Source Threshold Voltage Max: 3.7 V

Datasheet


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