Toshiba TK100A08N1,S4X MOSFETs MOSFET NCh 2.6ohm VGS10V10uAVDS80V

Width: 4.5 mm

Height: 15 mm

Length: 10 mm

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 130 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 45 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 100 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 2.6 mOhms

Vds - Drain-Source Breakdown Voltage: 80 V

Vgs th - Gate-Source Threshold Voltage: 4 V