Toshiba TK040N60Z1,S1F MOSFETs 600V DTMOS6 TO-247 40mohm

Fall Time: 5 ns

Rise Time: 75 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 85 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 297 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 120 ns

Typical Turn-Off Delay Time: 150 ns

Id - Continuous Drain Current: 20 A

Maximum Operating Temperature: + 150 C

Rds On - Drain-Source Resistance: 40 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 4 V