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Fall Time: 426 ns
Rise Time: 76 ns
Technology: Si
Unit Weight: 360 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 P-Channel
Qg - Gate Charge: 172 nC
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 180 W
Vgs - Gate-Source Voltage: - 20 V, + 10 V
Typical Turn-On Delay Time: 94 ns
Typical Turn-Off Delay Time: 1305 ns
Id - Continuous Drain Current: 90 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 4.3 mOhms
Vds - Drain-Source Breakdown Voltage: 40 V
Vgs th - Gate-Source Threshold Voltage: 1 V
