Toshiba TJ40S04M3L(T6L1,NQ MOSFETs P-Ch MOS -40A -40V 68W 4140pF 0.0091

Width: 5.5 mm

Height: 2.3 mm

Length: 6.5 mm

Technology: Si

Unit Weight: 330 mg

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 83 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 68 W

Vgs - Gate-Source Voltage: - 20 V, + 10 V

Id - Continuous Drain Current: 40 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 9.1 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 3 V