Toshiba SSM6N35AFU,LF MOSFETs LowON Res MOSFET ID=.25A VDSS=20V

Fall Time: 5.5 ns, 5.5 ns

Rise Time: 2 ns, 2 ns

Technology: Si

Unit Weight: 7.500 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 340 pC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 285 mW

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Typical Turn-On Delay Time: 2 ns, 2 ns

Typical Turn-Off Delay Time: 6.5 ns, 6.5 ns

Id - Continuous Drain Current: 250 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 0.5 S, 0.5 S

Rds On - Drain-Source Resistance: 750 mOhms, 750 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 350 mV