Toshiba SSM3K35CT,L3F MOSFETs Small Signal MOSFET N-ch VDSS=20V, VGSS=+/-10V, ID=0.18A, RDS(ON)=3.0ohm a. 4.0V, in CST3 package

Technology: Si

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 100 mW

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Id - Continuous Drain Current: 180 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 1.1 Ohms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1 V