Toshiba SSM3J66MFV,L3XHF MOSFETs AUTO AEC-Q SS MOS P-ch Low Voltage Gate Drive VDSS:-20V Ic:-0.8A SOT-723

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Qg - Gate Charge: 1.6 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 500 mW

Vgs - Gate-Source Voltage: - 8 V, + 6 V

Typical Turn-On Delay Time: 8 ns

Typical Turn-Off Delay Time: 26 ns

Id - Continuous Drain Current: 800 mA

Maximum Operating Temperature: + 150 C

Rds On - Drain-Source Resistance: 480 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1 V